| Tartalom: |
http://real.mtak.hu/16103/ |
| Archívum: |
MTA Könyvtár |
| Gyűjtemény: |
Status = Published
Type = Article
|
| Cím: |
Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems
|
| Létrehozó: |
Tóvári, Endre
Csontos, MiklĂłs
Kriváchy, Tamás
FĂĽrjes, PĂ©ter
Csonka, Szabolcs
|
| Kiadó: |
American Institute of Physics
|
| Dátum: |
2014-09-29
|
| Téma: |
QC06 Physics of condensed matter / szilárdtestfizika
|
| Tartalmi leírás: |
The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO2/SiNx
heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of
the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing
SiO2/SiNx gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while
exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiNx on the charge carrier
mobility of graphene is comparable to that of SiO2, demonstrating the merits of SiNx as an ideal material
platform for graphene based nanoelectromechanical applications.
|
| Nyelv: |
magyar
|
| Típus: |
Article
PeerReviewed
info:eu-repo/semantics/article
|
| Formátum: |
text
|
| Azonosító: |
Tóvári, Endre and Csontos, Miklós and Kriváchy, Tamás and Fürjes, Péter and Csonka, Szabolcs (2014) Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems. APPLIED PHYSICS LETTERS, 105 (12). p. 123114. ISSN 0003-6951
|
| Kapcsolat: |
293797, 271554
|
