| Tartalom: |
http://real.mtak.hu/4640/ |
| Archívum: |
MTA Könyvtár |
| Gyűjtemény: |
Status = Published
Type = Article
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| Cím: |
Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer
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| Létrehozó: |
Pécz, Béla
Tóth, Lajos
Barna, Árpád
Tsiakatouras, George
Ajagunna, Adebowale Olufunso
Kovács, András
Georgakilas, Alexandros
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| Kiadó: |
Elsevier
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| Dátum: |
2013-04
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| Téma: |
QC06 Physics of condensed matter / szilárdtestfizika
TK Electrical engineering. Electronics Nuclear engineering / elektrotechnika, elektronika, atomtechnika
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| Tartalmi leírás: |
Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented
single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the
diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer, eliminated the inversion
domains and reduced the density of threading dislocations in the GaN epilayers. The films have an
in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship
and of single polarity were realised on diamond with AlN buffer.
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| Típus: |
Article
PeerReviewed
info:eu-repo/semantics/article
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| Formátum: |
text
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| Azonosító: |
Pécz, Béla and Tóth, Lajos and Barna, Árpád and Tsiakatouras, George and Ajagunna, Adebowale Olufunso and Kovács, András and Georgakilas, Alexandros (2013) Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer. Diamond and Related Materials, 34. pp. 9-12. ISSN 0925-9635
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| Kapcsolat: |
MORGaN No. 214610
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| Létrehozó: |
info:eu-repo/semantics/openAccess
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