| Tartalom: |
http://dx.doi.org/10.1016/0168-583X(96)00245-5 |
| Archívum: |
MTA Könyvtár |
| Gyűjtemény: |
Status = Published
Type = Article
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| Cím: |
Channeling-like effects due to the macroscopic structure of porous silicon
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| Létrehozó: |
Hajnal, Zoltán
Szilágyi, Edit
Pászti, Ferenc
Battistig, Gábor
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| Kiadó: |
Elsevier
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| Dátum: |
1996
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| Téma: |
QC Physics / fizika
TK Electrical engineering. Electronics Nuclear engineering / elektrotechnika, elektronika, atomtechnika
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| Tartalmi leírás: |
When performing Rutherford Backscattering Spectrometry (RBS) measurements combined with channeling on ''columnar'' porous Si samples with the beam aligned to the direction of the pores, an additional yield decrease appears due to the macroscopic structure. Changes in the stopping power as the ions cross holes and material walls will also result in an additional spread in the ion energy. This work presents both experimental results and Monte Carlo type simulations showing the above structural effects. The simulations were done by a currently developed code, RBS-MAST, which is able to treat arbitrary structures on a nm-mu m scale.
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| Típus: |
Article
PeerReviewed
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| Formátum: |
text
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| Azonosító: |
Hajnal, Zoltán and Szilágyi, Edit and Pászti, Ferenc and Battistig, Gábor (1996) Channeling-like effects due to the macroscopic structure of porous silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 118 (1-4). pp. 617-621. ISSN 0168-583X
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